Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -3.5 VGS(th)(v) -1.5 RDS(ON)(m?)@4.101V 150 Qg(nC) @4.5V 6.3 QgS(nC) 2.3 Qgd(nC) 1.8 Ciss(pF) 364 Coss(pF) 41 Crss(pF) 12

N+N channel, VDSS withstand voltage 40V, ID current 8A, RDON on-resistance 22mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5V,

This P-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize the on-state resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.

N-channel, 100V, 5A, 234mΩ@10V

Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 200mA Power (Pd): 300mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 650mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 125@2mA, 5V Characteristic frequency (fT) 200MHz Operating temperature +150℃@(Tj)

N-channel 20V 5A

Type N VDSS(V) 40 ID@TC=66?C(A) 4.1 PD@TC=66?C(W) 1.56 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.46V 52

P-channel, -70V, -5.7A