Triode/MOS tube/transistor/module

PNP, Vceo=-30V, Ic=-1.5A, hfe=160~320

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 80V Average rectified current (Io): 100mA Forward voltage drop (Vf): 1.2V@100mA

N channel

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 100V, 2.6A, 0.2Ω@10V