Triode/MOS tube/transistor/module

NPN, Vceo=20V, IC=300mA, PD=0.625W

This N-Channel Enhancement Mode Power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary processes. This advanced MOSFET process is suitable for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

ON Semiconductor's new Field Stop Gen 4 IGBT series features a new field stop IGBT technology that provides excellent performance for solar inverters, UPS, welding machines, telecom, ESS, and PFC applications, with low conduction and switching losses in these important in application.

NPN, Vceo=160V, Ic=1.5A

MOS, N-channel, 18N20, 200V, 18A, 0.17Ω(Max)

General materials (low voltage MOSFET power supply, energy storage power supply, etc.), Vds=-60V Id=-45A Rds=26mΩ (30mΩ maximum) TO-252encapsulation;

NPN, Vceo=50V, Ic=150mA, hfe=200~400

N-channel, 100V/15A, 75 milliohms.

N channel

P-MOS -30V -17A SOP-8 15mΩ@-10V