Triode/MOS tube/transistor/module

IGBT module

Power MOSFET, 40 V, 0.67 mΩ, 370 A, single N-channel

This encapsulation integrates two internally connected N-channel devices in a common-source configuration. This results in extremely low encapsulation parasitics and an optimized thermal path to the bottom common source pad. Offers an extremely small footprint (5 x 6 mm), enabling higher power density.

Power MOSFET, ?20 V, -2.1 A, ?Cool Dual P-Channel, ESD, 1.6x1.6x0.55 mm UDFN encapsulation