Triode/MOS tube/transistor/module
Type N VDS(V) 20V VGS(V) ±12V Vth(V) 0.7V RDS(ON)(mΩ) 20mΩ ID(A) 8A
説明
P-channel, -12V, -4.3A, 50mΩ@-4.5V
説明
DIODES (US and Taiwan)
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FUXINSEMI (Fuxin Senmei)
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Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 80MHz Operating temperature: -55~+150℃@(Tj)
説明
Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
説明
ST (STMicroelectronics)
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