Triode/MOS tube/transistor/module
SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Additionally, the internal gate supply ESD diodes can withstand HBM surge stress above 2kV. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as audio, laptop adapters, lighting, ATX power supplies, and industrial power applications.
説明
Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
説明
RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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Ruichips (Ruijun Semiconductor)
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Taiwan Semiconductor
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TI (Texas Instruments)
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