Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

The SPS series is ON Semiconductor's next generation fully optimized, ultra-compact integrated MOSFET and driver power stage solution for high current, high frequency, synchronous buck, DC-DC applications. The FDMF5822DC integrates a driver IC along with a bootstrap Schottky diode, two power MOSFETs, and a temperature monitor into a thermally enhanced, ultra-compact 5 mm x 5 mm encapsulation. The SPS switching power stage is integrated and optimized for driver and MOSFET dynamic performance, minimizing system inductance and power MOSFET RDS(ON). The SPS series utilizes ON Semiconductor's high-performance PowerTrench MOSFET technology, which reduces switching ringing and eliminates the need for snubber circuits found in most buck converter applications. A driver IC with reduced dead time and propagation delay further enhances performance. The temperature warning feature warns of potential over-temperature conditions. A thermal shutdown feature shuts down the driver if an overtemperature condition occurs. The FDMF5822DC incorporates an automatic DCM mode (ZCD#) to improve light load efficiency. The FDMF5822DC also provides a 3-state 3.3 V PWM input for compatibility with a wide variety of PWM controllers.

IGBT module

Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.