Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

Industrial Power MOSFETs for compact and efficient designs with 5x6mm LFPAK encapsulation and high thermal performance.

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.

Industrial Power MOSFETs for compact and efficient designs with 5x6mm LFPAK encapsulation and high thermal performance.