Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

N channel

4 NPN, Vceo=80V, Ic=1.75A

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

NPN, Vceo=45V, Ic=500mA

650V 20A Triac,