Triode/MOS tube/transistor/module

NPN Vceo=30V Ic=100mA,hfe=200~450(Ic=2mA,Vce=5V)

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

N channel

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 110 VGS(th)(v) 1.5 RDS(ON)(m?)@4.205V 3.5 Qg(nC)@4.5V 23 QgS(nC) 7.5 Qgd(nC) 5.5 Ciss(pF) 2810 Coss(pF) 850 Crss(pF) 85

N-channel, 600V, 22A, 280mΩ@10V

IC(A) 0.15 VCEO(V) 50 hFE(β) 130-400 fT(MHZ) 150 VCBO(V) 60 VCE(sat)(W) 0.3 Type NPN

Transistor Type: 1 NPN - Pre-biased Power (Pd): 150mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V NPN