Triode/MOS tube/transistor/module
UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS processes. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
説明
TECH PUBLIC (Taizhou)
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China Resources Huajing
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N-channel, 600V, 20A, 360mΩ@10V
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 3.7/4.2 Continuous Drain Current ID (A) 145
説明
Galaxy Microelectronics
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NIKO-SEM (Nickerson)
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PNP, Vceo=-50V, Ic=-100mA
説明
This N-channel MOSFET is designed to increase the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.
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GOFORD (valley peak)
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This N-channel MOSFET features Fairchild's PowerTrench
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N-channel, 650V, 4.5A, 3.0Ω
説明