Triode/MOS tube/transistor/module
SINO-IC (Coslight Core)
メーカー
P-channel, -20V, -2.3A, 110mΩ@-4.5V
説明
FMS (beautiful micro)
メーカー
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3/0.6/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 60
説明
RealChip (Shenxin Semiconductor)
メーカー
N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 0.17A Power (Pd): 0.35W On-resistance (RDS(on)Max@Vgs,Id): 6Ω@10V, 0.17A
説明
PJSEMI (flat crystal micro)
メーカー
CJ (Jiangsu Changdian/Changjing)
メーカー
New product, ULN2803APG (C5252) upgraded product, field effect tube as output tube, lower tube voltage drop, less chip heat generation, better driving performance.
説明
HXY MOSFET (Huaxuanyang Electronics)
メーカー
Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 40V, ID current 5A, RDON on-resistance 85mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-3.0V
説明
UMW (Friends Taiwan Semiconductor)
メーカー
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.7-1.2 On-Resistance RDS(ON) (mΩ) 33/38 Continuous Drain Current ID (A) 4
説明
JSMSEMI (Jiesheng Micro)
メーカー