Triode/MOS tube/transistor/module

Type: 2 N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 5A On-resistance (RDS(on)@Vgs,Id): 0.022Ω@4.5V,5A Threshold voltage (Vgs( th)@Id): 1V@250μA

This N-channel MOSFET is designed for improving the overall power efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. than others with comparable R

Type: N+P channel, N channel: Drain-source voltage (Vdss): 60V Continuous drain current (Id): 5A On-resistance (RDS(on)@Vgs,Id): 60mΩ@10V, 80mΩ@4.5V , Threshold voltage (Vgs(th)@Id): 1.2V to 2.5V VDS=VGS,ID=250μA, P circuit: Drain-source voltage (Vdss): -60V Continuous drain current (Id): -4A ON resistance (RDS(on)@Vgs,Id): 700mΩ@10V, 115mΩ@4.5V, Threshold voltage (Vgs(th)@Id): -1.2V to -2.5V VDS=VGS,ID=250μA,

Type N VDSS(V) 50 ID@TC=70?C(A) 0.22 PD@TC=70?C(W) 0.225 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.50V 6000