Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 5A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 110mΩ@10V, 3.0A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA

Semiconductor Transistor Field Effect Transistor MOS tube, DFN-8 5*6, N channel, withstand voltage: 40V, current: 70A, 10V internal resistance (Max): 0.006Ω, power: 60W

N-channel, 600V, 5A

N-channel, 60V, 250mA, 5Ω@10V

PNP, Vceo=250V, Ic=16A

PNP, Vceo=-40V, Ic=-600mA, hfe=100~250

Fairchild's new field stop fourth generation

N-channel, 30V, 20A