Triode/MOS tube/transistor/module

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -18 VGS(th)(v) -1.7 RDS(ON)(m?)@4.443V 52 Qg( nC)@4.5V 9.2 QgS(nC) 2 Qgd(nC) 3.1 Ciss(pF) 910 Coss(pF) 141 Crss(pF) 98

N-channel, 200V, 30A, 75mΩ@10V

1200V, 50mΩ silicon carbide MOSFET automotive grade

N-channel, 100V, 150mA