Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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Cmos (Guangdong Field Effect Semiconductor)
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CBI (Creation Foundation)
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Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
説明
ST (STMicroelectronics)
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TECH PUBLIC (Taizhou)
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N-channel ignition IGBT for coils on automotive ignition coil driver circuits and plug applications.
説明
Seven-way high-gain Darlington array
説明
N-Channel Power Trench MOSFET 150V, 110A, 5.5 mΩ, the latest shielded gate PowerTrench MOSFET with smaller QSYNC and soft reverse recovery intrinsic body diode performance, fast switching speed, can greatly improve the efficiency of synchronous rectification .
説明
CJ (Jiangsu Changdian/Changjing)
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APM (Jonway Microelectronics)
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