Triode/MOS tube/transistor/module
RENESAS (Renesas)/IDT
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RealChip (Shenxin Semiconductor)
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HXY MOSFET (Huaxuanyang Electronics)
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JSMSEMI (Jiesheng Micro)
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APM (Jonway Microelectronics)
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This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
説明
TI (Texas Instruments)
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CSD16301Q2 25V, N-Channel NexFET MOSFET™, Single SON2x2, 29mΩ
説明
NCE (Wuxi New Clean Energy)
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APM (Jonway Microelectronics)
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N-channel, 40V, 100A, 2.2mΩ@10V
説明
CJ (Jiangsu Changdian/Changjing)
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Power MOSFET, 40V, 101A, 4.4mΩ, Single N-Channel, DPAK
説明
N-channel, 500V, 46A, 100mΩ@10V
説明
NCE (Wuxi New Clean Energy)
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This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.
説明