Triode/MOS tube/transistor/module

These N-channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's high cell density DMOS proprietary process. This very high-density process is uniquely suited to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are especially suitable for low-voltage applications requiring fast switching, low in-line power loss, and transient protection, such as automotive, DC/DC converters, PWM motor control, and other battery-powered circuits.

Semiconductor transistor field effect transistor MOS tube, TO-263, P channel, withstand voltage: -55V, current: -90A, 10V internal resistance (Max): 0.007Ω, 4.5V internal resistance (Max): 0.01Ω, power: 170W

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD41C (NPN) and MJD42C (PNP) are complementary devices.

N-channel, 50V, 0.22A

N-channel, 10V, 4A, 1.4Ω@10V

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