Triode/MOS tube/transistor/module

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 15nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 600mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 110@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

N-channel, 100V, 55A, 26mΩ@10V

N-channel, 250V, 93A, 17.5mΩ@10V

Type N VDS(V) 60V VGS(V) ±20V Vth(V) 1.6V RDS(ON)(mΩ) 14mΩ ID(A) 50A

NPN, Vceo=45V, Ic=0.5A, hfe=160~400