Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 60A Power (Pd): 51W On-Resistance (RDS(on)@Vgs,Id): 5.7mΩ @10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 34nC@10V Input Capacitance (Ciss@Vds): 1.07nF@15V ,Vds=30V Id=60A Rds=5.7mΩ, working temperature: -55℃~+150℃@(Tj);

N-channel, 100V, 25A, 57mΩ@10V

Type P VDSS(V) 40 VGS(V) 20 VTH(V) 1 IDS100°C(A) 20 RDS(Max) 65 PD100°C(W) 31.1

Automotive Power MOSFET, 60V, 155 mΩ, Single N-Channel, Logic Level, SOT?23 AEC-Q101 Qualified MOSFET with Production Part Approval Program (PPAP) capability for automotive applications.

IC(A) 0.5 VCEO(V) 80 hFE(β) 100-400 fT(MHZ) 100 VCBO(V) 80 VCE(sat)(W) 0.25 Type NPN