Triode/MOS tube/transistor/module

This bipolar power transistor is a voltage, high-speed transistor used in the horizontally deflected output stages of TVs and CRTs.

P channel, -30V-30A

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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 600mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 10nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 1V@500mA, 50mA Characteristic frequency (fT): 300MHz Operating temperature: +150℃@(Tj)