Triode/MOS tube/transistor/module

PNP, 140V

N-channel, 30V, 12A, 0.017Ω@10V

NPN, Vcc=50V, Ic=100mA

N-channel, 100V, 55A

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 100A Power (Pd): 150W On-Resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 2.0V@250uA Gate charge (Qg@Vgs): 56nC@10V Input capacitance (Ciss@Vds): 3.06nF@30V, Vds=60V Id=100A Rds=5.5mΩ, working Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;