Triode/MOS tube/transistor/module

Type N Drain-Source Voltage (Vdss) 40 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 25 On-Resistance (mΩ) 3.4 Input Capacitance (Ciss) 2650 Reverse Transfer Capacitance Crss (pF) 88 Gate Charge (Qg ) 39

The combination of low saturation voltage and high gain makes this bipolar power transistor ideal for power-saving high-speed switching applications.

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N-channel, 20V, 8A, 0.024Ω@4.5V

NPN, Vceo=50V, Ic=2A, hfe=120~240

N-channel, 900V, 2.1A, 6.5Ω@10V

This dual N-channel MOSFET is designed using an advanced Power Trench process to optimize RDS(ON) @ VGS = 2.5V.

CSD18563Q5A 60-V N-Channel NexFET Power MOSFET, CSD18563Q5A

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 145 VGS(th)(v) 1.6 RDS(ON)(m?)@4.198V 3.1 Qg(nC)@4.5V 22 QgS(nC) 4.3 Qgd(nC) 8.3 Ciss(pF) 2450 Coss(pF) 590 Crss(pF) 245