Triode/MOS tube/transistor/module
P-channel, -100V, -6.8A, 0.60Ω@-10V
説明
CJ (Jiangsu Changdian/Changjing)
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This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
説明
PNP Vceo=-50V Ic=-100mA, hfe=420~800 (Ic=-2mA, Vce=-5V)
説明
Type N VDSS(V) 60 ID@TC=80?C(A) 5 PD@TC=80?C(W) 0.5 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.60V 150
説明
DIODES (US and Taiwan)
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GOODWORK (Good Work)
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DIODES (US and Taiwan)
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