Triode/MOS tube/transistor/module

High voltage MOS 1000V4A internal resistance 4.5 ohms

Small Signal MOSFET -20 V, -540 mA, Single P-Channel, Gate Zener, SC-75 and SC-89

This Darlington bipolar power transistor is suitable for general power supply and switching, such as output and driver stages in switching regulators, converters, and power amplifier applications. MJD112 (NPN) and MJD117 (PNP) are complementary devices.

This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 8.6/11 Continuous Drain Current ID (A) 35

PNP Silkscreen 591

N-channel 100V 14A

The original factory changed the model, and the performance is exactly the same. The corresponding old model is: AO3416