Triode/MOS tube/transistor/module

NPN, Vceo=50V, Ic=100mA, hfe=160~350

1200v/150a 3.2Vce

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

Field Effect Transistor (MOSFET) Type: Dual N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 42A Power (Pd): 21W On-Resistance (RDS(on)@Vgs,Id): 7.5 mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 19nC@10V Input Capacitance (Ciss@Vds): 0.895nF@15V Operating Temperature: -55℃ ~+150℃@(Tj)

This P-channel 1.8V specified MOSFET uses a low-voltage PowerTrench process. This product is ideal for battery management applications.

This P-channel 2.5V specified MOSFET uses a robust gate version of the advanced PowerTrench process. It is optimized for power management applications with wide gate drive voltage ratings (2.5V – 12V).