Triode/MOS tube/transistor/module
N-channel, 200V, 5A, 600mΩ@10V
説明
HXY MOSFET (Huaxuanyang Electronics)
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Sinopower (large and medium)
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KODENSHI AUK (Photonics)
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N-channel, 600V, 11A, 380mA@10V
説明
LONTEN (Longteng Semiconductor)
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Potens (Bosheng Semiconductor)
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TECH PUBLIC (Taizhou)
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Cmos (Guangdong Field Effect Semiconductor)
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=400V, Ic=200mA, hfe=100~200
説明
ST (STMicroelectronics)
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N-channel, 200V, 25A, 0.07Ω@10V
説明
DIODES (US and Taiwan)
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This P-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
説明