Triode/MOS tube/transistor/module

NPN,50V,4A

NPN,Vceo=400V,Ic=200mA

NPN

Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.1A Power (Pd): 1.4W On-Resistance (RDS(on)@Vgs,Id): 80mΩ@10V,4A Threshold Voltage (Vgs(th)@Id): 2V@250uA Operating temperature: 150℃@(Tj)

NPN

NPN, Vceo=160V, Ic=1.5A, hfe=100~200