Triode/MOS tube/transistor/module

MOS, SOP-8, P-channel, -60V, -10A, 21mΩ (Max), 10.4W

ID drain current (A) 30 VDS withstand voltage (V) 30 RDS(on) on-resistance (Ω) 8 VGS 20 VGS(th) turn-on voltage 1.0-2.5 Type N

N-channel, 800V, 4A, 3Ω@10V

PNP

NPN RF Transistor The device can be used in low-noise UHF/VHF amplifiers with collector currents from 100 mA to 30 mA in common-emitter or common-base mode operation, in addition to low-frequency drift and high-output UHF oscillators. Designed with Process 40.

Type(P)/ESD(N)/VDS-30(V)/VGS12(±V)/VGS(th)-1.2(V)/ID-4.2(A)

PNP 9012