Triode/MOS tube/transistor/module

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 4.2A, RDON on-resistance 55mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.3V,

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P-channel, -30V, -8A, 21mΩ@-10V

P-channel, -30V, -4.2A, 65mΩ@-10V

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Type N Drain-Source Voltage (Vdss) 40 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 25 On-Resistance (mΩ) 3.1 Input Capacitance (Ciss) 2650 Reverse Transfer Capacitance Crss (pF) 88 Gate Charge (Qg ) 39

100V, N-Channel NexFET Power MOSFET, CSD19534Q5A 8-VSONP -55 to 150

PNP, Vceo=-150V, Ic=-600mA

PNP