Triode/MOS tube/transistor/module

Transistor@@transistor type: 1 NPN-pre-biased Power (Pd): 200mW Minimum input voltage (VI(on)@Ic/Io,Vce/Vo): 3V@10mA, 0.3V Maximum input voltage (VI(off )@Ic/Io,Vce/Vcc): 500mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@10mA, 0.5mA DC current gain (hFE@Ic,Vce): 30@5mA, 5V

Gallium nitride GaN power device: Vds:650V Id: 8A Rds:240mΩ Qg:21.5nC Qrr:39nC

N-channel, 600V, 34A, 88mΩ@10V