Transistor type: 1 NPN-pre-biased Power (Pd): 200mW Minimum input voltage (VI(on)@Ic/Io,Vce/Vo): 3V@20mA, 0.3V Maximum input voltage (VI(off)@Ic /Io,Vce/Vcc): 300mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@50mA, 2.5mA DC current gain (hFE@Ic,Vce): 100@5mA, 10V