Transistor type: 1 NPN-pre-biased Power (Pd): 200mW Minimum input voltage (VI(on)@Ic/Io,Vce/Vo): 3V@20mA, 0.3V Maximum input voltage (VI(off)@Ic /Io,Vce/Vcc): 500mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@10mA, 0.5mA DC current gain (hFE@Ic,Vce): 20@10mA, 5V Input resistance 4.7KΩ