Transistor Type: 1 NPN - Pre-biased Power (Pd): 150mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage ( VCE(sat)@Ic,Ib): 250mV@10mA, 1mA DC current gain (hFE@Ic,Vce): 30@10mA, 5V