onsemi (Ansemi)
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NCP5111DR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge

NCP5111DR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge
部品番号
NCP5111DR2G
カテゴリー
Power Chip > Gate Driver IC
メーカー/ブランド
onsemi (Ansemi)
カプセル化
SOIC-8
パッキング
taping
パッケージの数
2500
説明
The NCP5111 is a high voltage power gate driver driver with two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in a half-bridge configuration. It uses a bootstrap technique to ensure proper driving of the high side power switch.
リクエスト引用
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在庫あり 90532 PCS
連絡先
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のキーワード NCP5111DR2G
NCP5111DR2G 電子部品
NCP5111DR2G 売上
NCP5111DR2G サプライヤー
NCP5111DR2G ディストリビュータ
NCP5111DR2G データテーブル
NCP5111DR2Gの写真
NCP5111DR2G 価格
NCP5111DR2G オファー
NCP5111DR2G 最安値
NCP5111DR2G 検索
NCP5111DR2G を購入中
NCP5111DR2G チップ