onsemi (Ansemi)

DPAK-3

taping

2500

These N-channel power MOSFETs are produced using modern processes. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and transmitter switches for bipolar transistors. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias in the 3V to 5V range, thus enabling true direct in logic level (5V) integrated circuits. Switching power control. The previous development model was TA49027.