Diode/Bridge Rectifier

This silicon epitaxial planar diode is suitable for ultra-high-speed switching applications. The device is a three diode configuration with SC?88 encapsulation and is suitable for low power surface mount applications where PCB space is at a premium.

Diode configuration: Standalone DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 950mV@2A

VR=40V IO=2A VF=0.55V@2A

VR=40V IO=2A VF=0.55V@2A

200V, 3A, VF=0.89V@3A

200V, 3A, VF=0.89V@3A

600V, 1A, VF=1.7V@2A

600V, 1A, VF=1.7V@2A