Diode/Bridge Rectifier

DC reverse withstand voltage (Vr) Silicon carbide100 Average rectified current (Io) 3 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 20A Forward voltage drop (Vf): 1.2V@20A Forward surge current (Ifsm): 300A DC reverse withstand voltage (Vr) 1000 average Rectified current (Io) 20 Forward surge current (Ifsm) 260 Reverse current (Ir) 10

40V1A VF=0.5V

VR=30V IO=0.2A [email protected]

VR=30V IO=0.2A [email protected]

DC reverse withstand voltage (Vr) 200 Average rectified current (Io) Silicon carbide3.0 Reverse current (Ir) 0.2

DC reverse withstand voltage (Vr) 200 Average rectified current (Io) Silicon carbide3.0 Reverse current (Ir) 0.2

Diode configuration: Independent DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 500mA Forward voltage drop (Vf): 1.2V@500mA Reverse current (Ir): 5uA@200V Reverse recovery time ( trr): 1.5us Operating temperature: -55℃~+150℃@(Tj)