Diode/Bridge Rectifier

20V,1A,VF=0.45V@1A

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DC reverse withstand voltage (Vr): 800V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.7V@3A Reverse current (Ir): 10uA@800V Reverse recovery time (trr): 75ns

The Schottky diode adopts the Schottky diode potential barrier principle in the large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

A pair of common cathode VR=200V IO=5A VF=0.86V@5A