Triode/MOS tube/transistor/module

N-channel, 500V, 20A, 210mΩ@10V

N-channel, 600V, 1.2A, 11.5Ω@10V

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 8 ID(A)Max. -70 VGS(th)(v) -0.6 RDS(ON)(m?)@4.174V 6.7 Qg(nC) @4.5V 70 QgS(nC) 9.2 Qgd(nC) 18.4 Ciss(pF) 5625 Coss(pF) 927 Crss(pF) 716

AO6401, TSOP-6/TSOP-6

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance and switching losses. Added G-S Zener to increase ESD voltage level.

NPN,Vceo=80V,Ic=500mA

N-channel, VDSS withstand voltage 30V, ID current 150A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,