Triode/MOS tube/transistor/module

N-channel, 650V, 6.2A, 750mΩ@10V

N-channel, 60V, 500mA, 5Ω@10V

Triac off-state peak voltage (Vdrm): 800V On-state RMS current (It(rms)): 12A Surge current (Itsm@f): 120A@50Hz Gate average power dissipation (PG(AV)): 1W On-state peak voltage (Vtm): 1.55V Gate trigger current (Igt): 35mA Gate trigger voltage (Vgt): 1.3V Holding current (Ih): 35mA Operating temperature: -40℃~+125℃@(Tj )

Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.2A Power (Pd): 0.35W On-Resistance (RDS(on)@Vgs,Id): 68mΩ@10V, 4.2A Threshold voltage (Vgs(th)@Id): 30V@250uA Input capacitance (Ciss@Vds): 8800pF@15V Operating temperature: -55~+150℃@(Tj)

Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 200mA Power (Pd): 300mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 650mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 300@2mA, 5V Characteristic frequency (fT): 200MHZ Operating temperature: -55℃~+150℃@(Tj)