Triode/MOS tube/transistor/module

NPN, Vceo=50V, Ic=100mA, hfe=80~150

Drain-source voltage (Vdss): 100V, continuous drain current (Id) (at 25°C): 0.17A, gate-source threshold voltage: 1~3V@250uA, drain-source on-resistance: 3.8Ω@Vgs=0.17 A, 4.5V, maximum power dissipation (Ta=25°C): 0.9W, type: N-channel

This bipolar power transistor is suitable for general purpose amplifier and switching applications. TIP31, TIP31A, TIP31B, TIP31C (NPN); and TIP32, TIP32A, TIP32B, TIP32C (PNP) are complementary devices

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P-channel, -30V, -4.1A, 60 milliohms.

This is an 8.0 V P-channel power MOSFET.