Triode/MOS tube/transistor/module

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 20V Collector current (Ic): 1A Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 650@100mA, 1V D range (650 ~1000) NPN, Vceo=20V, Ic=1A