Triode/MOS tube/transistor/module
NPN, Vceo=65V, Ic=100mA
説明
NCE (Wuxi New Clean Energy)
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This P-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize the on-resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.
説明
MICROCHIP (US Microchip)
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CBI (Creation Foundation)
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ST (STMicroelectronics)
メーカー
This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
説明
CJ (Jiangsu Changdian/Changjing)
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DIODES (US and Taiwan)
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inventchip (Zhenxin Electronics)
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1200V, 30mΩ SiC MOSFET
説明