Triode/MOS tube/transistor/module

Transistor type: 2 NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW Collector cut-off current (Icbo): 50nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@50mA, 5mA DC current gain (hFE@Ic,Vce): 100@10mA, 1V Characteristic frequency (fT): 300MHz Operating temperature: +150℃@(Tj)

This N-channel MV MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. The process is optimized to minimize on-resistance while maintaining excellent switching performance using the industry's best soft body diode.

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 100 VGS(th)(v) 1.8 RDS(ON)(m?)@4.214V 4.4 Qg(nC)@4.5V - QgS(nC) 16 Qgd(nC) 4 Ciss(pF) 3458 Coss(pF) 1522 Crss(pF) 22

Built-in reverse diode, PNP, -100V, -8A, 20W

Pre-biased NPN 50V 500mA

N-channel, 500V, 8A, 850mΩ@10V