Triode/MOS tube/transistor/module

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

N-channel, VDSS withstand voltage 60V, ID current 50A, RDON on-resistance 15mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 60A Power (Pd): 17W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V, Threshold Voltage ( Vgs(th)@Id): 1.0V@250μA

Configuration Single+ESD Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 0.1 VGS(th)(v) - RDS(ON)(m?)@4.15V - Qg(nC)@ 4.5V - QgS(nC) - Qgd(nC) - Ciss(pF) 9 Coss(pF) 5 Crss(pF) 2