Triode/MOS tube/transistor/module

VR/40V IR/0.001mA VF/1.2V IO/0.6A Trr/No ns

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Field effect transistor (MOSFET) Type: P channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 3A On-resistance (RDS(on)@Vgs,Id): 110mΩ@4.5V, 3A