Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a single device and its external resistor bias network. A bias resistor transistor (BRT) consists of a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

Type P VDSS(V) 20 VGS(V) 12 VTH(V) 0.35 IDS35°C(A) 3.2 RDS(Max) 30 PD35°C(W) 1.25

NPN and PNP, 100V, 2A

N-CH, VDS=30V, Rds(on)=3.3mohm, ID=70A

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100mA Power (Pd): 200mW On-Resistance (RDS(on)@Vgs,Id): 8Ω@4V,10mA Threshold Voltage ( Vgs(th)@Id): 1.5V@100uA Operating temperature: 150℃@(Tj)

This PNP bipolar power transistor is suitable for general power amplification and switching such as output and driver stages in switching regulators, converters, and power amplifier applications. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.