Triode/MOS tube/transistor/module

N channel

NPN, Vceo=400V, Ic=12A

MOSFET, small signal, 500 mA, 60 V

N-channel, VDSS withstand voltage 30V, ID current 100mA, RDON on-resistance 2.2R@VGS 10V(MAX), VGS(th) turn-on voltage 0.8-1.5V,

N-channel, 650V, 8A, 1.4Ω@10V

N-channel 1000V 6.5A

Type: N-channel Drain-source voltage (Vdss): 150V Continuous drain current (Id): 8.6A Power (Pd): 39W On-resistance (RDS(on)@Vgs,Id: 196mΩ@10V, 4A Threshold voltage ( Vgs(th)@Id): 2.0@250uA Gate charge (Qg@Vgs) 8.2nC@10V Input capacitance (Ciss@Vds): 0.45nF@75V, Vds=150v Id=8.6A Rds=196mΩ, operating temperature: -55℃~+150℃@(Tj)

N+P channel, 30V, 30A

20V, P channel