Triode/MOS tube/transistor/module

N-channel 60V

P-channel, -20V, -2.6A, 97mΩ@4.5V

N-channel, 30V, 0.6A, 0.7Ω@4.5V

NPN,Vceo=80V,Ic=500mA

Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 60A Power (Pd): 60W On-resistance (RDS(on)@Vgs,Id: 7.2mΩ@10V, 20A Threshold voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 32nC@10V Input capacitance (Ciss@Vds): 2.497nF@30V, Vds=30v Id=60A Rds=7.2mΩ, operating temperature : -55℃~+150℃@(Tj)

NPN

P-channel, -30V, -5.6A, 46mΩ@-10V